期刊信息
- 刊名： 河北师范大学学报（自然科学版）Journal of Hebei Normal University (Natural Science)
- 主办： 河北师范大学
- ISSN： 1000-5854
- CN： 13-1061/N
- 中国科技核心期刊
- 中国期刊方阵入选期刊
- 中国高校优秀科技期刊
- 华北优秀期刊
- 河北省优秀科技期刊
Fabrication of Single Crystalline Tm2O3 Thin Films and Its F-N Tunneling Mechanism
摘要/Abstract
采用分子束外延方法结合原位退火生长技术在Si(001)衬底上制备了Tm2O3薄膜,XRD测量结果表明所制备样品为单晶Tm2O3.在低温环境下,采用MOS电容结构对薄膜进行I-V测试,研究了样品的F-N隧穿特性,得出Pt/Tm2O3和Al/Tm2O3的势垒高度分别为2.95,1.8eV.从能带的角度表明Tm2O3是一种高K栅介质候选材料.
The single crystalline Tm2O3 thin films were deposited on p-type Si(001)substrates through molecular beam epitaxy(MBE)and in situ annealed.The results of X-ray diffracton(XRD) show that the Tm2O3 thin films were single crystalline.I-V characteristics of the Tm2O3 thin films as gate dielectric in a MOS structure were measured at low temperature.The barrier heights of the Pt/Tm2O3 and Al/Tm2O3 contacts were obtained to be 2.95 eV and 1.8 eV,respectively.From the band offset point of view,single crystalline Tm2O3 thin film is believed to be a candidate as high-K material.