期刊信息
- 刊名： 河北师范大学学报（自然科学版）Journal of Hebei Normal University (Natural Science)
- 主办： 河北师范大学
- ISSN： 1000-5854
- CN： 13-1061/N
- 中国科技核心期刊
- 中国期刊方阵入选期刊
- 中国高校优秀科技期刊
- 华北优秀期刊
- 河北省优秀科技期刊
单晶体外延膜四方畸变随深度变化的测试
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1. 北京大学核物理与核技术国家重点实验室, 北京 100871;
2. 廊坊师范学院物理与电子信息学院, 河北 廊坊 065000 -
DOI：
The Measurement of Single Lattice Epilayer Tetragonal Distortion Changed with Depths
摘要/Abstract
采用卢瑟福背散射/沟道(RBS/C)实验,对有AlN插入层的GaN/Si样品进行了测试.通过测试分析计算表明:1)薄膜晶体的结晶品质良好,其最小产额χmin=2.5%;2)通过对RBS/C随机谱的模拟,得出样品结构为550 nm-GaN/20 nm-AlN/425 nm-GaN/Si;3)通过对GaN外延膜对称轴[0001]与非对称轴[1213]的角扫描,得出样品在120 nm处的四方畸变,为0.179%,表明GaN外延模的弹性应变在AlN缓冲层的作用下得到释放,避免了外延膜的碎裂,提高了GaN外延膜的结晶品质.
The structure of GaN/Si with AlNinterlayer is tested by Rutherford backscatter/channel (RBS/C) experiment. The experiment shows that GaN epilayer has high crystal quality, the minimum yields of the crystal is Vmin=2.5%. The selected sample structure is 550 nm-GaN/20 nm-AlN/425 nm-GaN/Si by simulating RBS/C random spectra. Through angular scans of the symmetry axis [0001] and asymmetry axis [1213], it can be calculated out the tetragonal distortion eT = 0.179% in 120 nm depths. The elastic strain of GaN epilayer by AlN buffer layer is released, this can avoid epilayer cracks, and effectively increase the GaN crystalline quality.