期刊信息

  • 刊名: 河北师范大学学报(自然科学版)Journal of Hebei Normal University (Natural Science)
  • 主办: 河北师范大学
  • ISSN: 1000-5854
  • CN: 13-1061/N
  • 中国科技核心期刊
  • 中国期刊方阵入选期刊
  • 中国高校优秀科技期刊
  • 华北优秀期刊
  • 河北省优秀科技期刊

重掺杂硅中的氧沉淀

  • 1. 唐山师范学院物理系, 河北唐山 063000:
    2. 河北工业职业技术学院计算机自动化控制系, 河北石家庄 050091
  • DOI:

On Oxygen Precipitation in Heavily Doped Silicon

摘要/Abstract

摘要:

采用X 射线双晶衍射法对重掺硼、重掺锑样品中的氧沉淀行为进行了研究, 分析了热处理条件、掺杂剂种类对重掺硅中氧沉淀的影响. 实验结果表明: 由于氧沉淀诱发缺陷间的相互作用、氧沉淀的重溶以及氧的外扩散等原因, 在长时间高温热处理时, 晶片表面完整性得到改善; 重掺硼样品中的氧沉淀较重掺锑样品中的氧沉淀明显. 实验中还观察到了氧沉淀重溶现象, 进一步验证了理论分析结果.

Abstract:

The behaviors of ox ygen precipitation both in heavily B??doped samples and in heavily Sb?? doped ones are invest ig ated by DXS. The effect of thermal treatment, temperature and dopant types on oxy?gen precipitat ion is analy zed. T he ex perimental result s show that the integrity of the w afers surface is im??proved w hen they are ret reated under high temperature for a long t ime. T his phenomenon is caused by the interact ion of the defect s induced by oxygen precipitat ion, by the redissolut ion of oxygen precipitat ion, and by the external diffusion of the oxygen. T he ox ygen precipitat ion in heavily B??doped samples is more obvious than that in heav ily Sb??doped ones. Moreover, the redissolut ion phenomenon of oxygen precipitation is ob??served, and this just conf irms the analysis on the above ex periment result s.