期刊信息

  • 刊名： 河北师范大学学报（自然科学版）Journal of Hebei Normal University (Natural Science)
  • 主办： 河北师范大学
  • ISSN： 1000-5854
  • CN： 13-1061/N
  • 中国科技核心期刊
  • 中国期刊方阵入选期刊
  • 中国高校优秀科技期刊
  • 华北优秀期刊
  • 河北省优秀科技期刊

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友情链接

基于准二维钙钛矿(GA)(MA)5Pb5I16的阻变存储器光电性能研究

  • (1.河北师范大学 化学与材料科学学院,河北省能量转换材料与器件技术创新中心,薄膜太阳能电池材料与器件河北省工程研究中心,石家庄 050024;2.石家庄铁道大学材料科学与工程学院,石家庄 050043)
  • DOI： 10.13763/j.cnki.jhebnu.nse.202503007

Photoelectric Performance of Resistive Random Access Memory Based on Quasi-two-dimensional Perovskite (GA)(MA)5Pb5I16

摘要/Abstract

摘要：

以准二维(2D)钙钛矿(GA)(MA)5Pb5I16(GA=胍,MA=甲胺)为阻变介质材料，聚甲基丙烯酸甲酯(PMMA)和氧化石墨烯(GO)为插层，制备了Ag/PMMA/(GA)(MA)5Pb5I16/GO/ITO(ITO=锡掺杂氧化铟)阻变存储器.研究结果表明，加入PMMA和GO插层的Ag/PMMA/(GA)(MA)5Pb5I16/GO/ITO器件在亮态条件下的开关比达到1 000，较暗态开关比增大了约100倍，表现出优异的光电调控性能.

Abstract：

The Ag/PMMA/(GA)(MA)5Pb5I16/GO/ITO(ITO=indium tin oxide)resistive random access memory was prepared with quasi-two-dimensional(2D) perovskite (GA)(MA)5Pb5I16(GA=guanidine,MA=methylamine) as the resistive medium material,polymethyl methacrylate(PMMA) and graphene oxide(GO) as the intercalation.The results showed that the on/off ratio of Ag/PMMA/(GA)(MA)5Pb5I16/GO/ITO device is 1 000 under illumination after the modification of PMMA and GO intercalation,about 100 times higher than that in the dark state,presenting the excellent photoelectronic regulatory properties.

关键词

关键词： 准二维钙钛矿 ; 阻变存储器 ; 界面调控 ; 光电调控 ; 开关比
Key words： quasi-two-dimensional perovskite ; resistive random access memory ; interface regulation ; photoelectric regulation ; on/off ratio

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