期刊信息

  • 刊名: 河北师范大学学报(自然科学版)Journal of Hebei Normal University (Natural Science)
  • 主办: 河北师范大学
  • ISSN: 1000-5854
  • CN: 13-1061/N
  • 中国科技核心期刊
  • 中国期刊方阵入选期刊
  • 中国高校优秀科技期刊
  • 华北优秀期刊
  • 河北省优秀科技期刊

Ag/Ag2O/Pt非易失存储的双极性电阻转变

  • 1. 北华航天工业学院 基础科学部, 河北 廊坊 065000;
    2. 河北师范大学 物理科学与信息工程学院, 河北 石家庄 050024;
    3. 河北省新型薄膜材料实验室, 河北 石家庄 050024
  • DOI: 10.13763/j.cnki.jhebnu.nse.2015.06.006

Bipolar Resistance Switching Characteristics of Ag/Ag2O/Pt Nonvolatile Memories

摘要/Abstract

摘要:

采用脉冲激光沉积系统制备了Ag/Ag2O/Pt器件并对其电致电阻特性进行了研究.结果表明,所制备的器件在电场触发下具有较好的高低电阻转变特性, 器件具有较好的抗疲劳性和温度、时间稳定性.微区XPS测试证明样品电致电阻效应的内在机制是Ag2O的氧化还原反应.

Abstract:

A Ag/Ag2O/Pt device was prepared using a pulsed laser deposition (PLD) technique and the its electrical resistance switching characteristic was investigated.The results show that the Ag/Ag2O/Pt device has good electric field-induced resistance switching characteristics ,and it also has good fatigue resistance,thermal and time stability.Based on the micro-X-ray photoemission spectroscopy analysis,it is thought demonstrated that the electrochemical redox reaction in the Ag2O film is responsible for the resistive switching behavior.

参考文献 15

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