河北师范大学学报—

ZnO is a versatile Ⅱ~Ⅵ group semiconductor material with a wide bandgap.It is a promising material for opto-electronic device application due to its unique propertys,such as high electron mobility and large exciton binding energy.The transformation from the n-type to p-type is very difficult owing to the self-compensation effect resulted from the native donor defects and impurity.This review summarized the doping mechanism of p-type ZnO,the latest developments of p-type doped ZnO,and the classification of doping element.

关键词

关键词： p型ZnO ; 掺杂机理 ; 掺杂元素

Key words： p-type ZnO ; doping mechanism ; doping elements

参考文献 30

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