在线阅读 --自然科学版 2009年1期《脉冲激光作用硅锗合金形成多种捕获界面态》
脉冲激光作用硅锗合金形成多种捕获界面态--[在线阅读]
韩志嵘1,2, 黄伟其2, 王海旭2, 金锋2, 刘世荣3
1. 贵阳学院物理与电子信息科学系, 贵州贵阳 550005;
2. 贵州大学理学院光电子及其应用重点实验室, 贵州贵阳 550026;
3. 中国科学院贵阳地球化学所电镜室, 贵州贵阳 550003
起止页码: 50--54页
DOI:
摘要
用脉冲激光辐照和退火氧化处理在硅锗合金衬底上形成了具有不同界面态分布的氧化低维结构.在这些结构中都有在几个纳米的氧化层中约束了大量的硅和锗的纳米团簇结构,分析这些低维结构所产生的光致荧光(PL)光谱发现,由于氧化条件的不同所生成的这些结构对应的PL光谱无论是强度,还是频率都发生了显著的变化.用量子受限-硅锗与氧化物界面态综合模型解释了样品PL发光的变化.

Various Trap States at the SiGe-SiO2 Interface Formed by Pulses Laser
HAN Zhi-rong1,2, HUANG Wei-qi2, WANG Hai-xu2, JIN Feng2, LIU Shi-rong3
1. Department of Physics and Electronlic Science, Guiyang University, Guizhou Guiyang 550005, China;
2. Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guizhou Guiyang 550026, China;
3. Institute of Geochemistry, Chinese Academy of Sciences, Guizhou Guiyang 550003, China
Abstract:
Fabrication of low-dimensional structures in air by pulses laser on SiGe alloy samples in which the different oxide st ructures are formed by laserirradiation and annealing treatment is reported.A series of phot olu-minescence(PL)emission has been observed due to various trap states at the SiGe-SiO2 interface formed under different preparing condi tio ns.It is very interesting that the levels of the trap states change with laser irradiation and annealing treat ment which produce the different P L band.A model for ex plaining the P L emission is pro- posed in which the trap states of the interface between some oxide and SiGe play an important role.

收稿日期: 2008-9-6
基金项目: 国家自然科学基金(10547006);贵州大学研究生创新基金(省研理工2007001)

参考文献: