在线阅读 --自然科学版 2014年5期《ZnO的p型掺杂研究进展》
ZnO的p型掺杂研究进展--[在线阅读]
高波1, 崔红2, 张艳峰1, 魏雨1, 郭晶华3
1. 河北师范大学 化学与材料科学学院, 河北 石家庄 050024;
2. 河北交通职业技术学院 教务处, 河北 石家庄 050035;
3. 劳伦斯伯克利国家实验室 先进光源, 加利福尼亚 伯克利 94720
起止页码: 530--534页
DOI: 10.11826/j.issn.1000-5854.2014.05.018
摘要
ZnO是一种宽带隙Ⅱ~Ⅵ族半导体材料,由于其独特的性能,如高电子迁移率、广泛的激子结合能,是一种很有前途的光电器件材料;但因本征施主缺陷和施主杂质引起的自补偿效应等很难使其有效地实现n型向p型导电的转变。介绍了ZnO的p型掺杂机理、掺杂元素分类及国内外对p型ZnO研究的最新进展。

Research Progress of p-type Doping ZnO
GAO Bo1, CUI Hong2, ZHANG Yanfeng1, WEI Yu1, GUO Jinghua3
1. College of Chemistry and Material Sciences, Hebei Normal University, Hebei Shijiazhuang 050024, China;
2. Dean's Office, Hebei Jiaotong Vocation and Technical College, Hebei Shijiazhuang 050035, China;
3. Advanced Light Source, Lawrence Berkeley National Laboratory, California Berkeley 94720, United States
Abstract:
ZnO is a versatile Ⅱ~Ⅵ group semiconductor material with a wide bandgap.It is a promising material for opto-electronic device application due to its unique propertys,such as high electron mobility and large exciton binding energy.The transformation from the n-type to p-type is very difficult owing to the self-compensation effect resulted from the native donor defects and impurity.This review summarized the doping mechanism of p-type ZnO,the latest developments of p-type doped ZnO,and the classification of doping element.

收稿日期: 2013-10-24
基金项目: 国家自然科学基金(11179029);河北省科技支撑计划(12215611D)

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